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Under thermal equilibrium,which of the following approache(s) can create a built-in electric field in a semiconductor? (A) p-n juction (B) spatial variation of doping concentration (C) hetrojuction (D) schottjy contacts (E) n-type GaAs (F) intrinsic Si 我看到有(A)(B)(C)(D)和(A) 哪個對呢 ? -- ※ 發信站: 批踢踢實業坊(ptt.cc) ◆ From: 111.249.157.238
jack0711:我覺得是ABCD@@ 02/04 17:30
popintaco:ABCD 02/04 20:44