The Output Logic Levels of nMOSs and pMOSs
輸出邏輯強度
Another Example:
F(A,B,C,D)=....
1.畫
2.Layout
3.寬度
4.畫C
5.上升下降(圖)
Memory--Latch and Register
Edge-Triggred D Register(DFF)
動作原理
CMOS Attributes
Field Device
(如何避免)
Inveretr Cross-sevtion
畫CMOS橫切面
Simplified(Design Rules)
解釋 描述Layout規格
如何定義
Physical Struture of an MOS Transistor
Parameters of Threshold Voltage
4.接觸面雜質
5.兩端電壓
Second Order Effect
形成原因影響
Second Order Effect
定義
定義
Second Order Effect(cont渴)
定義
Second Order Effect(cont渴)
隧道效應
離子碰撞
Non-ideal I-V Effects(cont渴)
溫度影響
Bn/Bp Ratio
(對應曲線)
Noise Margin Defintitions
無訊邊界
M=-1(-45度)
Vom
Vol VIL VIH
MOS Capaccitor
數值怎麼來
MOS Capaccitor:Diffusion capcitance
Cd
EX3: 3-input NAND
Sketch...
Redraws...
A single
Inverter Delay Estimate
Logical Effort of Common Gates
d=g*h+p
Limitations...
Inverter Delay Estimate
Daelay Components
tpdr=(6...上升時間
tpdr=(7...下降時間
Relationship Between...
d=f+p
=gh+p
=g*cont/cin+p
=cout/drive + p
(下一頁的)g=cin/cin-inV
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