1. 高壓MOS中LDD和LSD有什麼差別呢??
LDD means the asymmetric MOS, the source is tied to its body(PMOS: ntub;
NMOS: ptub)
LSD means the symmetric MOS. the source is not tied to body, body can be
tied to the protential you need.
2. 在給我們的檔案中高壓MOS有分成好多種,有30V,40V...etc..
我如果要套40V的MODEL要套哪一個呢??
Sorry, I could not find 40V high voltage PMOS(only 33.5V PMOS). For 33.5V
PMOS, you can use PMOSLDD model(model name: XPMOSLDD). The minimum gate
length for the existing PMOSLDD is L=3.5um. PMOSLDD should be good to 33.5V
maximum Vds
For 40V NMOS, you could use 48V LDMOS(model name: XNMOSMDL) or 65V
NMOS(model name: XNMOSHDD).
3. 在LSD和LDD的MODEL都有一個vptub 和vntub 和vsub
這三個點要接到哪裡????
For All MOS, Vsub(the potential of the substrate) should be tied to the
lowest potential(common is GND )
For PMOSLDD, the Vntub is tied to source
For PMOSLSD, the Vntub could be the potential which is not lower than the
potential of substrate, drain,source (common is supply voltage)
For NMOSLSD, the Vptub is tied to source
For NMOSLSD,the Vntub could be the potential which is not bigger than the
drain and source (common is GND)
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