[研究] IMEC Sees Double Patterning as Next Step towards 32nm

[yellowfishie (喵喵喵喵~~~)]

IMEC Sees Double Patterning as Next Step towards 32nm


Christoph Hammerschmidt
EE Times Europe
07/16/2007 3:54 PM

MUNICH, Germany — At Semicon West trade fair, Belgian research institute
IMEC announced progress towards 32nm lithography schemes, with double
patterning emerging as a probable intermediate solution before other
techniques will be in place.

The institute sees significant progress in 32nm lithography development
during the past year. "Driven by the needs to quickly develop 32nm processes
for memory applications and based on the promising results, we are quite
confident that double patterning will be taken up as an intermediate solution
for 32nm half pitch before a single exposure solution is ready for
production", said IMEC CEO Luc Van de hove.

IMEC is driving the 32nm research in three approaches: high-index 193nm
lithography, double-patterning techniques for 193nm water-based immersion
lithography and Extreme Ultra Violet (EUV) lithography.


In the area of double patterning, IMEC presently investigates challenges such
as mask design split, more cost-effective processes, and critical dimension
(CD) and overlay control. The research institute has demonstrated the
potential capability to achieve sub-3nm critical dimensions, which is one of
the requirements for 32nm production. IMEC simulations have shown that a more
uniform wafer CD distribution can be obtained by minimizing the mean
difference between the CD populations.

In this context, the institute is doing research to develop techniques to
split full chip designs automatically, which will be required when the double
patterning technique is to be used in production environments. In
collaboration with EDA vendors, IMEC researchers are investigating how double
patterning will affect EDA workflows and how designs can be made
split-compliant.

In the immersion lithography segment, IMEC will extend its strategic
partnership with ASML. While the current research at the institute is carried
out on an ASML XT:1700i with a numerical aperture of 1.2, both parties now
agreed to install a new XT:1900i with an NA of 1.35. According to an IMEC
press release, the target of high-index immersion lithography is to drive the
NA to a range of 1.55 to 1.6. This will enable to extend the 193nm immersion
lithography to the 32nm half pitch node. In the field of fluids, the
researchers have identified at least one fluid that seems to meet most
criteria required for the technology, but they did dot elaborate. Presently,
purified water is used for immersion lithography, but in order to achieve
higher NA the researchers probably will have to use a different liquid.

As to EUV, IMEC made it clear that this option is the only one with a clear
extendibility towards 22nm and possibly beyond. During the past year, IMEC
worked on integrating the ASML alpha tool with Sn EUV source. Presently, the
optics are fine-tuned for high resolution image and acceptance testing. The
research program so far has been focusing on interference exposures for
resist preparation, design and reticle tape-out as well as EUV simulations to
prepare the projects.

In addition, the researchers also started to investigate how today's
chemically amplified resists can be pushed down to 30nm feature sizes and
below.

Also at Semicon West, IMEC and semiconductor assembly and test service
provider Amkor Technology also announced they will jointly develop
wafer-level processing techniques aiming at 3D integration of semiconductor
devices. The collaboration aims at providing advanced low-cost packaging
solutions, IMEC said in a press statement.

http://eetimes.eu/showArticle.jhtml?articleID=201001500&queryText=imec

--
※ 發信站: 批踢踢實業坊(ptt.cc) 
◆ From: 140.112.48.60
推 gwliao:https://eda.ee.ntu.edu.tw/~gwliao/2008-03-02/DP.jpg
→ gwliao:你看Double patterning的精密度.....超高.
→ gwliao:看過這圖, 不難了解我未何覺得DP是一條不錯的路.
推 gwliao:其實DP和EUV都有希望, 也都有缺點.
→ gwliao:只是DP的機會大了點.
→ gwliao:Double patterning(DP)比Double exposure(DE)還要花時間,
→ gwliao:所以更花錢.  但EUV也有極大問題, 也好不到哪裡去.
→ gwliao:只是....DP/DE比較好玩, 我喜歡.   ( ￣ c￣)y▂ξ