Excimer laser crystallization of a-Si films has been studied actively
for the past few years because of its low thermal budget promise. It was
demonstrated that poly-Si TFT performance could be improved dramatically
through laser crystallization. The improved dramatically through laser
crystallization. The improved performance was a result of lateral poly-
Si grain growth during near complete melting of a-Si films. Conventionally
, laser crystallization is performed on a continuous a-Si film, and prehe-
ating during crystallization is usually used to further improve the TFT
performance.
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