課程名稱︰半導體工程
課程性質︰電機系選修
課程教師︰吳志毅
開課系所︰電機系
考試時間︰2005/04/20
試題 :
(10 points for each question)
1.(1) Draw a simple picture of the cross section of a flash memory.
(2) Briefly explain the working principles of a flash memory.
2.(1) Explain what epitaxial silicon is.
(2) Explain the differences between Czochralski method and the
floating zone method in making a single crystal.
3.(1) What are the differences between single crystal silicon,
polycrystalline silicon, and amorphous silicon?
(2) What are the differences in process condition when making
these silicons?
(3) In thin-film-transistor LCD(TFT-LCD) display, what kind of
silicon is used? Why?
4.What is numerical aperture? How does numerical aperture affect the
resolution of photolithography? Please explain it with physics,
not with mathematical formula.
5.(1) What are the two stopping mechanisms of ion implantation processes?
(2) Which one is the main stopping mechanism for lighter atoms?
6.How does "sheath region" form near the electrodes in a plasma system?
Why is it also called "dark space"?
7.(1) What are the wavelength of G-line, I-line, ArF laser, KrF laser
used in silicon photolithography processes?
(2) For application with 90 nm feature size, which photon line listed
above should be used?
8.Please explain how 4-point probe measure the sheet resistance?
Why can't we use 2-point probe to measure sheet resistance?
9.What are the application of silicon dioxide? Please list at least
five of them. Among these applications, which are the thinnest and
thickest ones?
10.Explain how mean free path affects the plasma generation and why a
vacuum chamber is needed to generate a stable plasma?
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