精華區beta NTU-Exam 關於我們 聯絡資訊
課程名稱︰數位電子與數位電路 課程性質︰必修 課程教師︰賴飛羆 開課學院:電資學院 開課系所︰資工系 考試日期(年月日)︰2011.11.10 考試時限(分鐘):100分鐘 是否需發放獎勵金:是 (如未明確表示,則不予發放) 試題: 1. Please find Thevenin and Norton equivalent circuits for the network in Fig.1 and explain what is the advantage of source transformation in detail. (30pts) 3Ω 3Ω a ┌──﹏﹏﹏──┬─────┬───﹏﹏﹏──○ │ │ │ │ │+ │ ╱╲ ︴ ╱╲ ╱ + ╲ 6Ω ︴V_a ╱ │ ╲ 3A ╲ - ╱ ︴ ╲ ↓ ╱ ╲╱ 2V_a │- ╲╱ │ │ │ │ │ │ b └───────┴─────┼────────○ ┴─  ̄ Fig.1:http://i.imgur.com/BSFFn.jpg 2. A simple electronic thermometer based on the circuit shown as Fig.2 in which 2 identical diodes are biased by current source I_1 and I_2. This simple but elegant circuit forms the heart of most of today's highly accurate electronic thermometers. Please try to explain in detail that why we prefer differential to single-ended. (15pts) +V_cc ○ │ ┌────┴────┐ │ │ I_1 ╱╲ ╱╲ I_2 ╱ │ ╲ ╱ │ ╲ ╲ ↓ ╱ ╲ ↓ ╱ ╲╱ ╲╱ │ + - │ ├─○ V_PTAT ○─┤ │ + + │ ┌┴┐ ┌┴┐ D1 ╲╱ V_D1 V_D2 ╲╱ D2 ─┼─ ─┼─ │ - - │ └────┬────┘ ┴─  ̄ Fig.2:http://i.imgur.com/ZRGUj.jpg 3. Please find the Q-point for the 3 diodes in Fig.3. Use the constant voltage drop model with V_on = 0.6V for the diodes. (15pts) +10V ○ │ ︴ R_1 ︴10kΩ ︴ D1 _ │ _ D2 D3 _ A │ ╱│ ↓I_1 │╲ │ C │ ╱│ ┌──┼◇ ├──┴──┤ ┼──┬──┼◇ ├──┐ I_2↓ │ ╲│ B │╱ │ ↓I_3 │ ╲│ │ │  ̄ │  ̄┴─ ︴ ︴  ̄ R_2 ︴10kΩ R_3 ︴10kΩ ︴ ︴ │ │ ○ ○ -20V -10V Fig.3:http://i.imgur.com/BEVQz.jpg 4. (l) Please indicate the course teacher's name in Chinese. (5pts) (2) P|ease indicate the name of textbook and author(s). (5pts) 5. Please try to describe how to measure electronic charge in detail. (20pts) Q_e = -1.6 x l0^(-l9) Coulomb 6. (1) Fig.4 gives the electron and hole concentrations in a 2-μm-wide region of silicon. In addition, there is a constant electric field of 10^3 V/m present in the sample. What is the total current density at x = 0 ? What are the individual drift and diffusion components of the hole and electron current densities at x = lμm ? Assume that the electron and hole mobilities are 350 and 150 cm^2/V*s , respectively. (15pts) E ←─── ▕ ▏ 1.01*10^18▕╲ ▏ ▕ ╲p(x) ▏ ▕ ╲ ▏ 10^16 ▕╲ ╲ ▏ ▕ ╲ ╲▏ ▕ ╲ ▏10^18 ▕ n(x)╲ ▏ ▕ ╲▏ ▕ ▏10^4 ▕ ▏ x=0 x=2μm Fig.4:http://i.imgur.com/FgII2.jpg (2) A 10-μm-long block of p-type silicon has an acceptor doping profile given by N_A(x) = 10^14 + (10^8)exp(-10^4 x) , where x is measured in cm. Please try to demonstrate that the material must have a nonzero internal electric field E. What the value of E at x = 0 ? (15pts) -- ※ 發信站: 批踢踢實業坊(ptt.cc) ◆ From: 218.167.192.128 ※ 編輯: rod24574575 來自: 218.167.192.128 (11/11 05:56)
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