課程名稱︰薄膜工程技術與應用
課程性質︰選修
課程教師︰王建義
開課學院：工學院
開課系所︰機械工程學系
考試日期（年月日）︰97/11/7
考試時限（分鐘）：130
是否需發放獎勵金：是
試題 :
1.Explain the characteristics and main difference between PVD and CVD
processes.
2.What are the basic modes of thin film growth? What are the surface
condition of substrate for each mode?
3.Calculate the mean free paths of Ar gas in the 10^(-2) Pa and 10^(-4) Pa
vacuum chambers at room temperature. Given τ= 4.4*10^(-2)T/(P*r^2),
τ=mean free path (cm), T=temperature(K), r:atomic radius of Ar,3.64A(埃)
4.Calculate the contamination time of clean surface under the different
environment of 10^(-1) Torr and 10^(-8) Torr at room temperature.
Given τc=2.85*10^(-8)(MT)^0.5 /P, P:pressure(Torr), M:molecular
weight(g/mol) ,31(g/mol),T:temperature(K).
5.Describe the definition of molecular flow and viscous flow;also explain
what laminar flow and turbulent flow are.
6.What are gas transfer pumps and entrapment pumps, and what are positive
displacement pump and kinetic pumps? Please describe them and give examples
for each of the category.
7.The equilibrium vapor pressure of Si is 6,9*10^(-9) Pa at 850 C(度C).
Please determine the evaporation flux and average velocity of Si at 850 C.
Given Φ=3.513*10^22 P/(MT)^0.5, Si=28 g/mol,R=8,314 joule/g* mole* K
8.An aluminum-copper alloy with mole ratio 15:1 is heated to 1350K.Estimate
the film composition when film is prepared by thermal evaporation of
the alloy. Given the atomic weights are Al=27, Cu=63.7, and the vapor
pressures of pure Al and pure Cu at 1350K are 10^(-6)Pa and 2*10^(-7)Pa,
respectively.
9.Schematic the brief structure of Sputter Ion Pump (SIP),and describe the
pumping mechanism of SIP.
10.Describe the mechanisms of Pirani vacuum and ionization gage.
P.S. 每題10分,總計100分
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